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79C2040RPFI-20 - 20 Megabit (512K x 40-Bit) EEPROM MCM 512K X 40 EEPROM 5V, 150 ns, PDFP100

79C2040RPFI-20_2443506.PDF Datasheet


 Full text search : 20 Megabit (512K x 40-Bit) EEPROM MCM 512K X 40 EEPROM 5V, 150 ns, PDFP100


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32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位)6兆位512k × 32的位),2.5伏,只有突发模式,双启动,同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
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AM29F040B-120EF AM29F040B-120EK AM29F040B-120ED AM 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 4兆位12亩8位)的CMOS 5.0伏只,统一部门快闪记忆
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AM29F800T-70 AM29F800T-90 AM29F800T-150SEB AM29F80 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 8兆位,048,576 x 8-Bit/52488 x 16位).0伏的CMOS只,扇区擦除闪存
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Advanced Micro Devices, Inc.
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79C2040RPFI-20 79C2040RPFE-20 79C2040RPFH-20 79C20 20 Megabit (512K x 40-Bit) EEPROM MCM 512K X 40 EEPROM 5V, 150 ns, PDFP100
Maxwell Technologies, Inc
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SST[Silicon Storage Technology, Inc]
89LV1632RPQK-30 89LV1632 89LV1632RPQE-30 89LV1632R 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM
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PARADIGM
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Eon Silicon Solution
 
 Related keyword From Full Text Search System
79C2040RPFI-20 reserved 79C2040RPFI-20 gate threshold 79C2040RPFI-20 Server 79C2040RPFI-20 reset 79C2040RPFI-20 Micropower
79C2040RPFI-20 search 79C2040RPFI-20 band 79C2040RPFI-20 Speed 79C2040RPFI-20 dropout 79C2040RPFI-20 uncooled cel
 

 

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