PART |
Description |
Maker |
89C1632RPQE-25 89C1632RPQH-25 89C1632RPQK-25 89C16 |
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 16兆位12k × 32的位)立方米的SRAM
|
Maxwell Technologies, Inc
|
S29CD016G0MFFA202 S29CD016G0MFAA212 S29CD016G0JFAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位)6兆位12k × 32的位),2.5伏,只有突发模式,双启动,同步读/写闪存与VersatileI内存/输出 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位)6兆位512k × 32的位),2.5伏,只有突发模式,双启动,同步读/写闪存与VersatileI内存/输出 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
|
Spansion Inc. Spansion, Inc.
|
AM29F040B-120EF AM29F040B-120EK AM29F040B-120ED AM |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 4兆位12亩8位)的CMOS 5.0伏只,统一部门快闪记忆 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
AM29F800T-70 AM29F800T-90 AM29F800T-150SEB AM29F80 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 8兆位,048,576 x 8-Bit/52488 x 16位).0伏的CMOS只,扇区擦除闪存 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
79C2040RPFI-20 79C2040RPFE-20 79C2040RPFH-20 79C20 |
20 Megabit (512K x 40-Bit) EEPROM MCM 512K X 40 EEPROM 5V, 150 ns, PDFP100
|
Maxwell Technologies, Inc
|
33LV408RPFS-30 33LV408 33LV408RPFB-20 33LV408RPFB- |
4 Megabit (512K x 8-Bit) CMOS SRAM
|
MAXWELL[Maxwell Technologies]
|
33C408RTFS-30 33C408 33C408RPFB-20 33C408RPFB-25 3 |
4 Megabit (512K x 8-Bit) CMOS SRAM
|
MAXWELL[Maxwell Technologies]
|
79LV0408XPFK-25 79LV0408 79LV0408RPFE-20 79LV0408R |
Low Voltage 4 Megabit (512k x 8-bit) EEPROM
|
MAXWELL[Maxwell Technologies]
|
SST39VF800-90-4C-BK SST39VF800-70-4C-EK SST39VF800 |
8 MEGABIT (512K X 16-BIT) MULTI-PURPOSE FLASH
|
SST[Silicon Storage Technology, Inc]
|
89LV1632RPQK-30 89LV1632 89LV1632RPQE-30 89LV1632R |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM
|
MAXWELL[Maxwell Technologies]
|
PDM31096SA8TTY PDM31096SA8TTR PDM31096SA8SOTR PDM3 |
4 megabit 3.3V static RAM 512K x 8-bit revolutionary pinout
|
PARADIGM
|
EN29LV800JT-70T EN29LV800JT-90TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Top sector. 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Top sector.
|
Eon Silicon Solution
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